IEC 63068-4:2022 PDF Download

The standard focuses on defect recognition criteria and aims to establish a comprehensive and reliable method for assessing the quality of silicon carbide homoepitaxial wafers used in power devices. It specifically addresses defects that can impact the performance and reliability of such devices.

The combined method of optical inspection and photoluminescence described in this standard allows for the identification and evaluation of defects in the as-grown silicon carbide homoepitaxial wafer. Optical inspection involves visually examining the wafer's surfaces and interfaces under appropriate illumination conditions to detect defects. On the other hand, photoluminescence measures the luminescent properties of the wafer, providing additional information about its quality and defect density.

The standard provides guidelines on both techniques, including sample preparation, microscope settings, and image analysis. It also includes examples of optical inspection and photoluminescence images to aid operators in distinguishing and categorizing different types of defects. This enables manufacturers and users of silicon carbide power devices to evaluate the quality of homoepitaxial wafers and make informed decisions regarding their suitability for specific applications.